Polycrystalline SiC thin films produced by plasma CVD.
نویسندگان
چکیده
منابع مشابه
Plasma CVD of hydrogenated boron-carbon thin films from triethylboron.
Low-temperature chemical vapor deposition (CVD) of B-C thin films is of importance for neutron voltaics and semiconductor technology. The highly reactive trialkylboranes, with alkyl groups of 1-4 carbon atoms, are a class of precursors that have been less explored for low-temperature CVD of B-C films. Herein, we demonstrate plasma CVD of B-C thin films using triethylboron (TEB) as a single sour...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 1989
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms1972.109.219